ir mosfet strong ir fet? IRF60B217 hexfet ? power mosfet d s g application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free* ? ? rohs compliant, halogen-free v dss 60v r ds(on) typ. 7.3m ?? max 9.0m ?? i d 60a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature to-220ab IRF60B217 s d g g d s gate drain source base part number package type standard pack form quantity IRF60B217 to-220 tube 50 IRF60B217 orderable part number 25 50 75 100 125 150 175 t c , casetemperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 36a 1 2016? 01-05
2 2016? 01-05 ? IRF60B217 notes: ?? repetitive rating; pulse width limit ed by max. junction temperature. ?? limited by t jmax , starting t j = 25c, l = 0.131mh, r g = 50 ? , i as = 36a, v gs =10v. ?? i sd ? 36a, di/dt ? 630a/s, v dd ? v (br)dss , t j ? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ?? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ?? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while vds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 16a, v gs =10v. absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, vgs @ 10v (silicon limited) 60 a ? i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 42 i dm pulsed drain current ?? 225 p d @t c = 25c maximum power dissipation 83 w linear derating factor 0.56 w/c v gs gate-to-source voltage 20 v t j operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 85 mj e as (thermally limited) single pulse avalanche energy ?? 124 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 1.8 c/w ? r ? cs case-to-sink, flat greased surface 0.50 ??? r ? ja junction-to-ambient ? ??? 62 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.047 ??? v/c reference to 25c, i d = 1ma ? r ds(on) ??? 7.3 9.0 m ??? v gs = 10v, i d = 36a ? ??? 9.0 ??? v gs = 6.0v, i d = 18a ? v gs(th) gate threshold voltage 2.1 ??? 3.7 v v ds = v gs , i d = 50a i dss drain-to-source leakage current ??? ??? 1.0 a v ds =40 v, v gs = 0v ??? ??? 150 v ds =40v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 2.0 ??? ?? static drain-to-source on-resistance
3 2016? 01-05 ? IRF60B217 d s g dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 150 ??? ??? s v ds = 10v, i d =36a q g total gate charge ??? 44 66 i d = 36a q gs gate-to-source charge ??? 12 ??? v ds = 30v q gd gate-to-drain charge ??? 14 ??? v gs = 10v ? q sync total gate charge sync. (qg? qgd) ??? 30 ??? t d(on) turn-on delay time ??? 8.3 ??? ns v dd = 30v t r rise time ??? 37 ??? i d = 36a t d(off) turn-off delay time ??? 24 ??? r g = 2.7 ?? t f fall time ??? 20 ??? v gs = 10v ? c iss input capacitance ??? 2230 ??? pf ? v gs = 0v c oss output capacitance ??? 215 ??? v ds = 25v c rss reverse transfer capacitance ??? 140 ??? ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) ??? 230 ??? v gs = 0v, v ds = 0v to 48v ? c oss eff.(tr) output capacitance (time related) ??? 295 ??? v gs = 0v, v ds = 0v to 48v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 60 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 225 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? 0.9 1.2 v t j = 25c,i s = 36a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? ??? 12 ??? v/ns t j = 175c,i s = 36a,v ds = 40v t rr reverse recovery time ??? 26 ??? ns t j = 25c v dd = 51v ??? 27 ??? t j = 125c i f = 36a, q rr reverse recovery charge ??? 24 ??? nc t j = 25c di/dt = 100a/s ??? ??? 25 ??? t j = 125c ? i rrm reverse recovery current ??? 1.7 ??? a t j = 25c ? nc ?
4 2016? 01-05 ? IRF60B217 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 30v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 36a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 102030405060 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds= 12v i d = 36a
5 2016? 01-05 ? IRF60B217 fig 10. maximum safe operating area fig 9. typical source-drain diode forward voltage fig 13. typical on-resistance vs. drain current fig 11. drain-to-source breakdown voltage fig 12. typical c oss stored energy 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 60 65 70 75 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma 0 10 20 30 40 50 60 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 e n e r g y ( j ) 0 40 80 120 160 i d , drain current (a) 4.0 8.0 12.0 16.0 20.0 24.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs = 10v 0.1 1 10 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec 100sec dc operation in this area limited by r ds (on)
6 2016? 01-05 ? IRF60B217 fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? fig 15. avalanche current vs. pulse width 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 36a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche cu rrent vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse)
7 2016? 01-05 ? IRF60B217 fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 19. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 10ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 24a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 36a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 20 40 60 80 100 120 140 q r r ( n c ) i f = 24a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 20 40 60 80 100 120 140 q r r ( n c ) i f = 36a v r = 51v t j = 25c t j = 125c
8 2016? 01-05 ? IRF60B217 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
9 2016? 01-05 ? IRF60B217 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application.
10 2016? 01-05 ? IRF60B217 ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level to-220 n/a rohs compliant yes published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in th is document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a wr itten document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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